tm FFP15S60S 15 a, 600 v, stealth? ii diode ?2007 fairchild semiconductor corporation FFP15S60S rev. a www.fairchildsemi.com 1 FFP15S60S features ? stealth recovery t rr = 35 ns (@ i f = 15 a) ? max forward voltage, v f = 2.6 v (@ t c = 25c) ? 600v reverse voltage and high reliability applications ? general purpose ? switching mode power supply ? boost diode in continuous mode power factor corrections ? power switching circuits 15 a, 600 v, stealth? ii diode the FFP15S60S is a stealth? ii diode with soft recovery characteristics. it is silicon nitride pas sivated ion-implanted epitaxial planar construction. this device is intended for use as freewheeling of boost diode in s witching power supplies and other power swithching applications. their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. absolute maximum ratings t c = 25 o c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter rating unit v rrm peak repetitive reverse voltage 600 v v rwm working peak reverse voltage 600 v v r dc blocking voltage 600 v i f(av) average rectified forward current @ t c = 123 o c 15 a i fsm non-repetitive peak surge current 60hz single half-sine wave 150 a t j , t stg operating and storage temperature range -65 to +150 o c symbol parameter rating unit r jc maximum thermal resistance, junction to case 1.3 o c/w device marking device package reel size tape width quantity f15s60s FFP15S60Stu to-220-2l - - 50 1. cathode 2. anode 1. cathode 2. anode to-220-2l october 2007 ? improved dv/dt capability ? rohs compliant
FFP15S60S 15 a, 600 v, stealth? ii diode www.fairchildsemi.com 2 electrical characteristics t c = 25 o c unless otherwise noted symbol parameter min. typ. max. unit v f 1 i f = 15 a i f = 15 a t c = 25 o c t c = 125 o c - - 2.1 1.6 2.6 - v i r 1 v r = 6 00 v v r = 600 v t c = 25 o c t c = 125 o c - - - - 100 500 a t rr i f = 1 a, di/dt = 100 a/s, v r = 30 v t c = 25 o c - 21 30 ns t rr i rr s factor q rr i f = 15 a, di/d t = 200 a/s, v r = 390 v t c = 25 o c - - - - 23 2.5 0.7 29 35 - - - ns a nc t rr i rr s factor q rr i f = 15 a, di/d t = 200 a/s, v r = 390 v t c = 125 o c - - - - 55 4.3 1.1 118 - - - - ns a nc w avl avalan che energy ( l = 40 mh) 20 - - mj test circuit and waveforms notes: 1: pulse: test pulse width = 300 s, duty cycle = 2% ?2007 fairchild semiconductor corporation FFP15S60S rev. a
FFP15S60S 15 a, 600 v, stealth? ii diode www.fairchildsemi.com 3 typical performance characteristics figure 1. typical forward voltage drop figure 2. typical reverse current vs. forward current vs. reverse voltage figure 3. typical junction capacitance figure 4. typical reverse recovery time vs. di/d t figure 5. typical reverse recovery figure 6. forward current derating curve current vs. di/dt 01234 0.1 1 10 t c = 75 o c t c = 125 o c forward current, i f [a] forward voltage, v f [v] t c = 25 o c 70 100 200 300 400 500 600 0.01 0.1 1 10 100 t c = 125 o c t c = 25 o c t c =75 o c reverse current, i r [ a ] reverse voltage, v r [v] 10 0.1 1 10 100 30 60 90 120 150 180 typical capacitance at 0v = 180 pf capacitances, cj [pf] reverse voltage, v r [v] 100 200 300 400 500 600 20 30 40 50 60 i f = 15a t c = 25 o c t c = 75 o c t c = 125 o c reverse recovery time, t rr [ns] di/dt [ a/ s ] 25 50 75 100 125 150 0 10 20 30 40 50 average forward current, i f(av) [a] case temperature, t c [ o c ] dc 100 200 300 400 500 600 1 2 3 4 5 6 7 t c = 125 o c t c = 25 o c t c = 75 o c reverse recovery current, i rr [a] di/dt [ a/ s ] i f = 15a ?2007 fairchild semiconductor corporation FFP15S60S rev. a
FFP15S60S 15 a, 600 v, stealth? ii diode www.fairchildsemi.com 4 mechanical dimensions dimensions in millimeters to-220-2l ?2007 fairchild semiconductor corporation FFP15S60S rev. a
FFP15S60S 15 a, 600 v, stealth? ii diode www.fairchildsemi.com 5 ?2007 fairchild semiconductor corporation FFP15S60S rev. a
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